Samsung MZ3LO3T8HCJR-00AD3 3.84TB Triple-Level Cell PCI Express NVMe 5.0 Read Intensive E3.S Solid State Drive
Endurance : Read Intensive
Flash Memory Technology : Triple-Level Cell
Hot Swappable : Yes
Random Read : 2500000 IOPS
Random Write : 280000 IOPS
Drive Interface : PCI Express NVMe
Interface Standard : PCI Express NVMe 5.0
Form Factor : E3.S


