Samsung MZ-V9P1T0 990 Pro Series 1TB Multi-Level Cell PCI Express NVMe 4.0 x4 V NAND M.2 2280 Solid State Drive
Flash Memory Technology : Triple-Level Cell
Drive Type : Internal
Sequential Read : 7,450 MB/s
Random Read : 1,200,000 IOPS
Random Write : 1,550,000 IOPS
Sequential Write : 6,900 MB/s
Operating Temperature : 0C to +70C
Drive Interface : PCI Express NVMe
Interface Standard : PCI Express NVMe 4.0 x4
Form Factor : M.2 2280
Compliance Standards : WEEE


