Samsung MZ-V9E1T0 1TB Triple-Level Cell PCI Express NVMe 4.0 x4 M.2 2280 Solid State Drive
Flash Memory Technology : Triple-Level Cell
Sequential Read : 5000 MB/s
Random Read : 20K IOPS
Random Write : 90K IOPS
Sequential Write : 4200 MB/s
Drive Interface : PCI Express NVMe
Interface Standard : PCI Express NVMe 4.0 x4
Form Factor : M.2 2280


