Samsung MZ-V6E500BW 500GB PCIe Solid State Drive
Usage Application : Client PCs
Model Name : MZ-V6E500
Interface : PCIe Gen 3.0 x4, NVMe 1.2 (partial)
Capacity : 500GB
Controller : Samsung Polaris Controller
NAND Flash Memory : Samsung V-NAND 3bit MLC Flash memory
DRAM Cache Memory : 512MB LP DDR3
Dimension : Max 80.15 x 22.15 x Max 2.38 (mm)
Form Factor : M.2 (2280)
Sequential Read : 3,200MB/s
Sequential Write : 1,800MB/s
QD 1 Thread 1 Ran Read : 14,000 IOPS
QD 1 Thread 1 Ran Write : 50,000 IOPS
QD 32 Thread 4 Ran Read : 330,000 IOPS
QD 32 Thread 4 Ran Write : 330,000 IOPS
Idle : Typ 40mW
Active Read(AVG) : Typ 5.4W
Active Write(AVG) : Typ 4.4W
DEVSLP L1.2 mode : Typ 5mW
Data Security : AES 256-bit for User Data Encryption, TCG/Opal
Supporting Features : TRIM(Required OS support), Garbage Collection, S.M.A.R.T
Operating Temprature : 0°C to 70°C
Non-Operating Temperature : -45°C to 85°C
Humidity : 5% to 95%, non-condensing
Shock Non-Operating : 1,500G, duration: 0.5ms, 3 axis
Vibration Non-Operationg : 20-2,000Hz, 20G
MTBF : 1.5 million hours
Weight : Max 8g
Total Bytes Written : 200


